| Autor: |
Alberto Ferraris, Eunjung Cha, Peter Mueller, Kirsten Moselund, Cezar B. Zota |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
Communications Engineering, Vol 3, Iss 1, Pp 1-7 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2731-3395 |
| DOI: |
10.1038/s44172-024-00293-2 |
| Popis: |
Abstract Multiplexed local charge storage, close to quantum processors at cryogenic temperatures could generate a multitude of control signals, for electronics or qubits, in an efficient manner. Such cryogenic electronics require generating quasi-static control signals with small area footprint, low noise, high stability, low power dissipation and, ideally, in a multiplexed fashion to reduce the number of input/outputs. In this work, we integrate capacitors with cryogenic high-electron mobility transistor (HEMT) arrays and demonstrate quasi-static bias generation using gate pulses controlled in time and frequency domains. Multi-channel bias generation is also demonstrated. Operation at 4 K exhibits improved bias signal variability and greatly reduced subthreshold swing, reaching values of ~6 mV/decade. Due to the very low threshold voltage of 80 mV at 4 K and the steep subthreshold swing, these circuits can provide an advantage over the silicon-based complementary metal-oxide-semiconductor equivalents by allowing operation at significantly reduced drive bias in the low output voltage regime |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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