| Autor: |
Oleg I. Rabinovich, Asker R. Kushhov, Dahir S. Gaev |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
Modern Electronic Materials, Vol 1, Iss 3, Pp 73-75 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
2452-1779 |
| DOI: |
10.1016/j.moem.2015.11.006 |
| Popis: |
In this paper, heterostructures with self-organized quantum dots have been produced using incongruent evaporation. Island films on the basis of the intermediate phases forming in the Sn–Se have been grown. The surface morphology of the structures has been studied using atomic force microscopy (AFM). A certain change of the band gap confirms the presence of quantum states in the electron spectrum of the structures. We have found that for obtaining structures with a homogeneous distribution of islands the process of incongruent evaporation should be carried out at high condensate selection rates. By varying the rate of incongruent evaporation of the film material one can achieve directed growth of islet films with a preset islet size distribution. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
