| Autor: |
Jiyeon Ma, Oukjae Lee, Geonwook Yoo |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 512-516 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2912186 |
| Popis: |
We report on the effect of Al2O3 surface passivation on electrical properties of beta-gallium oxide (β-Ga2O3) nanomembrane field-effect transistor (FET). The fabricated bottom-gate β -Ga2O3(100) FET exhibits enhanced channel conductance and reduced hysteresis after the conformal atomic layer deposited Al2O3 passivation investigated by high-resolution transmission electron microscope (HR-TEM) analysis. Moreover, abnormal positive threshold voltage (VTH) shifts under negative bias stress are turned into negative VTH shifts, and off-state breakdown characteristics is improved as well. A modeling work using physics-based TCAD shows reduced surface depletion effect after the surface passivation. The results demonstrate that high-quality ALD-Al2O3 surface passivation is an effective method to improve electrical properties of the bottom-gate β-Ga2O3 FET and its device applications. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
