| Autor: |
E S Moiseev, Arina Tashchilina, S A Moiseev, Barry C Sanders |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
New Journal of Physics, Vol 23, Iss 6, p 063071 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
1367-2630 |
| DOI: |
10.1088/1367-2630/ac0754 |
| Popis: |
We seek to design experimentally feasible broadband, temporally multiplexed optical quantum memory with near-term applications to telecom bands. Specifically, we devise dispersion compensation (DC) for an impedance-matched narrow-band quantum memory by exploiting Raman processes over two three-level atomic subensembles, one for memory and the other for DC. DC provides impedance matching over more than a full cavity linewidth. Combined with 1 s spin-coherence lifetime the memory could be capable of power efficiency exceeding 90% leading to 10 ^6 modes for temporal multiplexing. Our design could lead to significant multiplexing enhancement for quantum repeaters to be used for telecom quantum networks. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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