Moiré-related in-gap states in a twisted MoS2/graphite heterojunction

Autor: Chun-I Lu, Christopher J. Butler, Jing-Kai Huang, Yu-Hsun Chu, Hung-Hsiang Yang, Ching-Ming Wei, Lain-Jong Li, Minn-Tsong Lin
Jazyk: angličtina
Rok vydání: 2017
Předmět:
Zdroj: npj 2D Materials and Applications, Vol 1, Iss 1, Pp 1-6 (2017)
Druh dokumentu: article
ISSN: 2397-7132
DOI: 10.1038/s41699-017-0030-6
Popis: Heterointerfaces: Gap states in a twisted heterojunction New moiré-related states emerge in the bandgap of molybdenum disulfide when interfaced with highly oriented pyrolytic graphite. Two-dimensional materials enable designer heterostructures to be created layer-by-layer, but greater understanding of how different interfaces affect the electronic structure is required if they are to be fully exploited for applications. An international team of researchers led by Minn-Tsong Lin from National Taiwan University use low-temperature scanning tunneling microscopy and spectroscopy to show that in-gap states can form at molybdenum disulfide/graphite heterointerfaces, which are sensitive to both the stacking angle and local strain, and have a small dependence on the moiré superstructure. These tunable in-gap states, which are attributed to interlayer charges, show the complexity, but also potential of using stacking and strain for engineering the electronic structure of heterostructures.
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