Response of Graphene Based Gated Nanodevices Exposed to THz Radiation

Autor: Fedorov G.E., Gaiduchenko I.A., Golikov A.D., Rybin M.G., Obraztsova E.D., Voronov B.M., Coquillat D., Diakonova N., Knap W., Goltsman G.N.
Jazyk: angličtina
Rok vydání: 2015
Předmět:
Zdroj: EPJ Web of Conferences, Vol 103, p 10003 (2015)
Druh dokumentu: article
ISSN: 2100-014X
DOI: 10.1051/epjconf/201510310003
Popis: In this work we report on the response of asymmetric graphene based devices to subterahertz and terahertz radiation. Our devices are made in a configuration of a field-effect transistor with conduction channel between the source and drain electrodes formed with a CVD-grown graphene. The radiation is coupled through a spiral antenna to source and top gate electrodes. Room temperature responsivity of our devices is close to the values that are attractive for commercial applications. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors.
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