| Autor: |
A. Hötger, T. Amit, J. Klein, K. Barthelmi, T. Pelini, A. Delhomme, S. Rey, M. Potemski, C. Faugeras, G. Cohen, D. Hernangómez-Pérez, T. Taniguchi, K. Watanabe, C. Kastl, J. J. Finley, S. Refaely-Abramson, A. W. Holleitner, A. V. Stier |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
npj 2D Materials and Applications, Vol 7, Iss 1, Pp 1-9 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2397-7132 |
| DOI: |
10.1038/s41699-023-00392-2 |
| Popis: |
Abstract Single spin-defects in 2D transition-metal dichalcogenides are natural spin-photon interfaces for quantum applications. Here we report high-field magneto-photoluminescence spectroscopy from three emission lines (Q1, Q2, and Q*) of He-ion induced sulfur vacancies in monolayer MoS2. Analysis of the asymmetric PL lineshapes in combination with the diamagnetic shift of Q1 and Q2 yields a consistent picture of localized emitters with a wave function extent of ~3.5 nm. The distinct valley-Zeeman splitting in out-of-plane B-fields and the brightening of dark states through in-plane B-fields necessitates spin-valley selectivity of the defect states and lifted spin-degeneracy at zero field. Comparing our results to ab initio calculations identifies the nature of Q1 and Q2 and suggests that Q* is the emission from a chemically functionalized defect. Analysis of the optical degree of circular polarization reveals that the Fermi level is a parameter that enables the tunability of the emitter. These results show that defects in 2D semiconductors may be utilized for quantum technologies. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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