C-Band GaN Dual-Feedback Low-Noise Amplifier MMIC with High-Input Power Robustness
| Autor: | Ha-Wuk Sung, Seong-Hee Han, Seong-Il Kim, Ho-Kyun Ahn, Jong-Won Lim, Dong-Wook Kim |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | Journal of Electromagnetic Engineering and Science, Vol 22, Iss 6, Pp 678-685 (2022) |
| Druh dokumentu: | article |
| ISSN: | 2671-7255 2671-7263 |
| DOI: | 10.26866/jees.2022.6.r.137 |
| Popis: | In this paper, using the 0.2 μm ETRI GaN HEMT process, we developed a C-band GaN dual-feedback low-noise amplifier MMIC for an RF receiver module that requires high-input power robustness. By applying a feedback microstrip line at the source of the transistor and series resistor-capacitor (RC) feedback between the gate and the drain of the transistor, we obtained stable amplifier operation and a compromised impedance trace for both input impedance matching and noise matching while suppressing performance degradation of the maximum available gain and minimum noise figure. The developed low-noise amplifier MMIC, which implements simple matching circuits by using biasing elements as matching elements, had a linear gain of more than 21.4 dB and a noise figure of less than 1.91 dB in the wide bandwidth of 4.3–7.4 GHz. Under the single-tone power test, the low-noise amplifier MMIC had an output P1dB of 14.3–20.1 dBm, and the two-tone intermodulation distortion measurement exhibited an input third-order intercept point (IIP3) of 2.2–5.6 dBm in the same frequency range as the above. |
| Databáze: | Directory of Open Access Journals |
| Externí odkaz: |
|