| Autor: |
Wen-Yang Hsu, Yuan-Chi Lian, Pei-Yu Wu, Wei-Min Yong, Jinn-Kong Sheu, Kun-Lin Lin, YewChung Sermon Wu |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 9, Iss 12, p 622 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi9120622 |
| Popis: |
Micron-sized patterned sapphire substrates (PSS) are used to improve the performance of GaN-based light-emitting diodes (LEDs). However, the growth of GaN is initiated not only from the bottom c-plane but also from the sidewall of the micron-sized patterns. Therefore, the coalescence of these GaN crystals creates irregular voids. In this study, two kinds of nucleation layers (NL)—ex-situ AlN NL and in-situ GaN NL—were used, and the growth of sidewall GaN was successfully suppressed in both systems by modifying the micron-sized PSS surface. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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