| Autor: |
Chris Chun-Chih Chung, Chun-Ming Ko, Tien-Sheng Chao |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 959-963 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2940606 |
| Popis: |
A self-limited low-temperature trimming process is demonstrated without surface morphology degradation. It shows great potential to control the trimming process with a large process window (400-900 s). Subthreshold characteristics are improved and Ioff is drastically reduced (~two orders of magnitude) with increasing trimming cycles. Full silicidation on the source/drain (FUSI-S/D) is performed to improve Ion. Surprisingly, after silicidation, both Ion and μFE shows degradation despite that the series resistance is improved. An ultrathin body junctionless (UTB-JL) device is fabricated to investigate the degradation cause by direct CV measurement on the device, which can give us an insight into the details of the change with the silicidation. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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