Highly Stretchable High‐Performance Silicon Nanowire Field Effect Transistors Integrated on Elastomer Substrates

Autor:	Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen, Linwei Yu
Jazyk:	angličtina
Rok vydání:	2022
Předmět:	elastomers field effect transistor silicon nanowire integration stretchable electronics Science
Zdroj:	Advanced Science, Vol 9, Iss 9, Pp n/a-n/a (2022)
Druh dokumentu:	article
ISSN:	2198-3844
DOI:	10.1002/advs.202105623
Popis:	Abstract Quasi‐1D silicon nanowires (SiNWs) field effect transistors (FETs) integrated upon large‐area elastomers are advantageous candidates for developing various high‐performance stretchable electronics and displays. In this work, it is demonstrated that an orderly array of slim SiNW channels, with a diameter of 105 and 134 ‐ 277 mV decade−1, respectively, working stably in an ambient environment over 270 days without any passivation protection. These results indicate a promising new routine to batch‐manufacture and integrate high‐performance, scalable and stretchable SiNW‐FET electronics that can work stably in harsh and large‐strain environments, which is a key capability for future practical flexible display and wearable electronic applications.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/68ede58c7be947e982c62ed5aa57c955 Zobrazit plný text záznamu View record in DOAJ Plný text ve formátu PDF Plný text ve formátu HTML
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