Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1−x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity

Autor: Jayanta Bhattacharjee, Sahadeb Ghosh, Preeti Pokhriyal, Rashmi Gangwar, Rajeev Dutt, Archna Sagdeo, Pragya Tiwari, S. D. Singh
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: AIP Advances, Vol 11, Iss 7, Pp 075025-075025-6 (2021)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/5.0055874
Popis: A bandgap bowing parameter of 0.4 ± 0.2 eV for β-(AlxGa1−x)2O3 alloys, with Al compositions (x) up to 0.35, has been determined from the bandgap obtained from low temperature optical reflectivity, which suppresses the effect of electron–phonon interaction on the bandgap. A length scale of inhomogeneity of 0.21 ± 0.03 times of the electron–hole mean free path length has been estimated for β-(AlxGa1−x)2O3 alloys. The unit cell of β-(AlxGa1−x)2O3 alloys compresses, and the lattice parameters vary linearly with Al substitution. Our results provide insight into bandgap engineering and alloy disorder for β-(AlxGa1−x)2O3 alloys, which are an important material system for applications in deep ultraviolet opto-electronic devices.
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