| Autor: |
Paramanand Prajapati, S. Balamurugan |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Access, Vol 11, Pp 95874-95888 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2023.3311266 |
| Popis: |
Limitations of Silicon (Si)-based devices have compelled us to use alternative devices for modern power electronics applications. Material attributes of wide-band-gap devices (such as GaN and SiC) possess the ability to bridge these gaps. They can be used for higher power applications and provide high power-density, high efficiency and better thermal performance. GaN-based devices in electric vehicle power modules make the vehicle more efficient, achieving an extended range for the same battery size. Worldwide, researchers and engineers are working on GaN-based power-electronics modules. On the one hand, the utilisation of GaN switches in power modules eliminates a few existing design concerns. While it also introduces new challenges for designers. Mere replacing Si with GaN doesn’t give the stipulated result. This article identifies the works related to GaN-based DC-DC converter modules to determine how researchers address the circuit design issues with GaN. This paper presents a detailed description of the material benefits of GaN and paves the path of future work by identifying the research gap in the field of GaN-based DC-DC converters. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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