| Autor: |
Qiyun Xu, Enkui Lian, Phoebe Yeoh, Marek Skowronski |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 12, Iss 6, Pp 065018-065018-7 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0087570 |
| Popis: |
Electromigration in Ge2Sb2Te5 and N-doped Ge2Sb2Te5 line cell structures has been studied by mapping out electric field/current-induced composition changes using x-ray energy dispersive spectroscopy. Both materials exhibit pronounced segregation in a molten state, with Te moving toward the anode and Ge and Sb toward the cathode. The width of the transition region from a composition of over 90% Te to over 90% Ge–Sb was 500 nm for an electric field of 1.1 × 107 V/m. In the Ge–Sb-rich end of the cell, Ge precipitates out of the melt, forming almost pure Ge inclusions with a size up to 100 nm. The Ge–Sb–Te segregation and precipitation do not appear to be affected by doping with nitrogen. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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