| Autor: |
Yen-Wei Yeh, Su-Hui Lin, Tsung-Chi Hsu, Shouqiang Lai, Po-Tsung Lee, Shui-Yang Lien, Dong-Sing Wuu, Guisen Li, Zhong Chen, Tingzhu Wu, Hao-Chung Kuo |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
Nanoscale Research Letters, Vol 16, Iss 1, Pp 1-14 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
1556-276X |
| DOI: |
10.1186/s11671-021-03623-x |
| Popis: |
Abstract In recent years, the process requirements of nano-devices have led to the gradual reduction in the scale of semiconductor devices, and the consequent non-negligible sidewall defects caused by etching. Since plasma-enhanced chemical vapor deposition can no longer provide sufficient step coverage, the characteristics of atomic layer deposition ALD technology are used to solve this problem. ALD utilizes self-limiting interactions between the precursor gas and the substrate surface. When the reactive gas forms a single layer of chemical adsorbed on the substrate surface, no reaction occurs between them and the growth thickness can be controlled. At the Å level, it can provide good step coverage. In this study, recent research on the ALD passivation on micro-light-emitting diodes and vertical cavity surface emitting lasers was reviewed and compared. Several passivation methods were demonstrated to lead to enhanced light efficiency, reduced leakage, and improved reliability. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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