Crystalline Silicon Solar Cells with Thin Silicon Passivation Film Deposited prior to Phosphorous Diffusion
| Autor: | Ching-Tao Li, Fangchi Hsieh, Shi Yan, Cuifeng Wan, Yakun Liu, Jing Chen, Likarn Wang |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| Zdroj: | International Journal of Photoenergy, Vol 2014 (2014) |
| Druh dokumentu: | article |
| ISSN: | 1110-662X 1687-529X |
| DOI: | 10.1155/2014/491475 |
| Popis: | We demonstrate the performance improvement of p-type single-crystalline silicon (sc-Si) solar cells resulting from front surface passivation by a thin amorphous silicon (a-Si) film deposited prior to phosphorus diffusion. The conversion efficiency was improved for the sample with an a-Si film of ~5 nm thickness deposited on the front surface prior to high-temperature phosphorus diffusion, with respect to the samples with an a-Si film deposited on the front surface after phosphorus diffusion. The improvement in conversion efficiency is 0.4% absolute with respect to a-Si film passivated cells, that is, the cells with an a-Si film deposited on the front surface after phosphorus diffusion. The new technique provided a 0.5% improvement in conversion efficiency compared to the cells without a-Si passivation. Such performance improvements result from reduced surface recombination as well as lowered contact resistance, the latter of which induces a high fill factor of the solar cell. |
| Databáze: | Directory of Open Access Journals |
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