| Autor: |
C. Y. Wei, B. Shen, P. Ding, P. Han, A. D. Li, Y. D. Xia, B. Xu, J. Yin, Z. G. Liu |
| Jazyk: |
angličtina |
| Rok vydání: |
2017 |
| Předmět: |
|
| Zdroj: |
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017) |
| Druh dokumentu: |
article |
| ISSN: |
2045-2322 |
| DOI: |
10.1038/s41598-017-05248-6 |
| Popis: |
Abstract The charge-trapping memory devices with a structure Pt/Al2O3/(Ta2O5) x (TiO2) 1−x /Al2O3/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta2O5) x (TiO2) 1−x and Si substrate was designed to enhance the memory performance by controlling the composition and dielectric constant of the charge-trapping layer and reducing the difference of the potentials at the bottom of the conduction band between (Ta2O5) x (TiO2) 1−x and Si substrate. The memory device with a composite charge storage layer (Ta2O5) 0.5 (TiO2) 0.5 shows a density of trapped charges 3.84 × 1013/cm2 at ± 12 V, a programming/erasing speed of 1 µs at ± 10 V, a 8% degradation of the memory window at ± 10 V after 104 programming/erasing cycles and a 32% losing of trapped charges after ten years. The difference among the activation energies of the trapped electrons in (Ta2O5) x (TiO2) 1−x CTM devices indicates that the retention characteristics are dominated by the difference of energy level for the trap sites in each TTO CTM device. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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