| Autor: |
Utamuradova Sharifa, Daliev Khojakbar, Daliev Shakhrukh, Muzafarova Sultanpasha, Fayzullaev Kakhramon, Muzafarova Gulnoza |
| Jazyk: |
English<br />French |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
E3S Web of Conferences, Vol 583, p 04006 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2267-1242 |
| DOI: |
10.1051/e3sconf/202458304006 |
| Popis: |
This article presents the results of a study of the capacitance- voltage characteristics of MSM photodiode structures with silicon-based potential barriers. The results of studies aimed at creating Au-nCdS-nSi- pCdTe-Au photodiode structures for the spectral range of 1.0-1.4 microns with an area of 29 mm2, which were obtained by vacuum evaporation in a quasi-closed volume of sputtering layers of cadmium sulfide and cadmium telluride, are presented. onto a silicon substrate with resistivity ρ = 607.47 Ohm∙cm. A distinctive feature of the resulting photodiode Au - nCdS-nSi - pCdTe - Au structures are two-way sensitive and have a low capacitance value of C = 23.3 pF at room temperature. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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