One watt gallium arsenide class-E power amplifier with a thin-film bulk acoustic resonator filter embedded in the output network
| Autor: | Kyle Holzer, Jeffrey S. Walling |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2015 |
| Předmět: |
UHF power amplifiers
thin film devices acoustic resonator filters gallium arsenide high electron mobility transistors band-pass filters GaAs frequency 2496 MHz to 2690 MHz power 1 W linearisation techniques out-of-band spectrum filtering finite inductance ACPF7041 compact bandpass FBAR filter HEMT discrete pseudomorphic high-electron-mobility transistor PAE power added efficiency out-of-band spectrum suppression PA thin-film bulk acoustic resonator filter class-E power amplifier Engineering (General). Civil engineering (General) TA1-2040 |
| Zdroj: | The Journal of Engineering (2015) |
| Druh dokumentu: | article |
| ISSN: | 2051-3305 |
| DOI: | 10.1049/joe.2015.0058 |
| Popis: | Integration of a class-E power amplifier (PA) and a thin-film bulk acoustic wave resonator (FBAR) filter is shown to provide high power added efficiency in addition to superior out-of-band spectrum suppression. A discrete gallium arsenide pseudomorphic high-electron-mobility transistor is implemented to operate as a class-E amplifier from 2496 to 2690 MHz. The ACPF7041 compact bandpass FBAR filter is incorporated to replace the resonant LC tank in a traditional class-E PA. To reduce drain voltage stress, the supply choke is replaced by a finite inductance. The fabricated PA provides up to 1 W of output power with a peak power added efficiency (PAE) of 58%. The improved out-of-band spectrum filtering is compared to a traditional class-E with discrete LC resonant filtering. Such PAs can be combined with linearisation techniques to reduce out-of-band emissions. |
| Databáze: | Directory of Open Access Journals |
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