Modeling, Simulation and Calibration of Silicon Wet Etching
| Autor: | Andrzej Kociubiński, Mariusz Duk, Tomasz Bieniek, Paweł Janus |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Journal of Telecommunications and Information Technology, Iss 4 (2023) |
| Druh dokumentu: | article |
| ISSN: | 1509-4553 1899-8852 |
| DOI: | 10.26636/jtit.2009.4.974 |
| Popis: | The methods of parameter optimization in Etch3DTM simulator and the results of the comparison of simulations of silicon etching in KOH with experiments are presented. The aim of this study was to calibrate the tool to a set of process conditions that is offered by Institute of Electron Technology (ITE). The Taguchi approach was used to analyze the influence of every remove probability function (RPF) parameter on one or more output parameters. This allowed tuning the results of simulation to the results of real etching performed in ITE. |
| Databáze: | Directory of Open Access Journals |
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