Photovoltaic field effect transistor (PVFET)-based Ge/Si photodetector for low-power silicon photonics
| Autor: | Q. Y. Zeng, Z. X. Pan, Z. H. Zeng, J. C. Liu, X. Y. Liu, Z. T. Chen, Z. Gong |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: | |
| Zdroj: | AIP Advances, Vol 9, Iss 8, Pp 085226-085226-7 (2019) |
| Druh dokumentu: | article |
| ISSN: | 2158-3226 65291506 |
| DOI: | 10.1063/1.5100039 |
| Popis: | We propose a Ge/Si photodetector based upon photovoltaic field effect transistor (PVFET) for low-power silicon photonics. The device realizes detection by modulating the conductivity of the FET channel through photo-induced gate voltage, exhibiting ultra-high responsivity. The responsivity can reach about 104 A/W at operating voltages lower than 1.5 V. Furthermore, its light-to-dark (on/off) current ratio and temporal response characteristics are studied numerically. A maximum on/off ratio up to 193 can be obtained by optimizing the doping concentration of Ge gate. |
| Databáze: | Directory of Open Access Journals |
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