| Autor: |
Walid Issa, Jose Ortiz Gonzalez, Olayiwola Alatise |
| Jazyk: |
angličtina |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
Energies, Vol 15, Iss 20, p 7768 (2022) |
| Druh dokumentu: |
article |
| ISSN: |
1996-1073 |
| DOI: |
10.3390/en15207768 |
| Popis: |
A series connection of SiC MOSFETs for kV blocking capability can enable more design flexibility in modular multi-level converters as well as other topologies. In this paper, a novel gate driver circuit capable of driving series-connected SiC MOSFETs for high voltage applications is proposed. The primary advantage of the proposed design is that a single gate driver was used to switch all the series devices. The circuit used switching capacitors to sequentially charge and discharge device gate capacitances during switching and enable a negative turn-off voltage to avoid device coupling from Miller-capacitive feedback effects. With the proposed gate driver design and appropriate component values selection, avalanche breakdown due to voltage divergence during switching transients could be avoided with only a minor imbalance in the top device. Simulations and experimental measurements showed that the zero-current turn-off transition of all switches was achieved, and this approved the validity of the design. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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