Development of All-Around SiO2/Al2O3 Gate, Suspended Silicon Nanowire Chemical Field Effect Transistors Si-nw-ChemFET

Autor: Ahmet Lale, Auriane Grappin, Laurent Mazenq, David Bourrier, Aurélie Lecestre, Jérôme Launay, Pierre Temple-Boyer
Jazyk: angličtina
Rok vydání: 2017
Předmět:
Zdroj: Proceedings, Vol 1, Iss 4, p 419 (2017)
Druh dokumentu: article
ISSN: 2504-3900
DOI: 10.3390/proceedings1040419
Popis: We present a sensor platform associated to silicon-nanowire chemical field effect transistors (Si-nw-ChemFET). Innovations concern the use of networks of suspended silicon N+/P/N+ nanowires as conducting channel, the realization by thermal oxidation and Atomic-Layer Deposition (ALD) of a SiO2/Al2O3 gate insulator all-around the silicon nanowires, and their final integration into covered SU8-based microfluidic channels. The Si-nw-MOSFET/ChemFET fabrication process and electrical/electrochemical characterizations are presented. The fabrication process did not need an expensive and time-consuming e-beam lithography, but only fast and “low cost” standard photolithography protocols. Such microdevice will provide new opportunities for bio-chemical analysis at the micro/nanoscale.
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