Optical Performance of Two Dimensional Electron Gas and GaN:C Buffer Layers in AlGaN/AlN/GaN Heterostructures on SiC Substrate
| Autor: | Roman B. Adamov, Daniil Pashnev, Vadim A. Shalygin, Maria D. Moldavskaya, Maxim Ya. Vinnichenko, Vytautas Janonis, Justinas Jorudas, Saulius Tumėnas, Paweł Prystawko, Marcin Krysko, Maciej Sakowicz, Irmantas Kašalynas |
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| Jazyk: | angličtina |
| Rok vydání: | 2021 |
| Předmět: |
terahertz and infrared technologies
high-frequency Drude conductivity complex dielectric permittivity electron effective mass phonon damping AlGaN/GaN heterostructures Technology Engineering (General). Civil engineering (General) TA1-2040 Biology (General) QH301-705.5 Physics QC1-999 Chemistry QD1-999 |
| Zdroj: | Applied Sciences, Vol 11, Iss 13, p 6053 (2021) |
| Druh dokumentu: | article |
| ISSN: | 2076-3417 |
| DOI: | 10.3390/app11136053 |
| Popis: | Terahertz time-domain spectroscopy and Fourier-transform infrared spectroscopy were developed as the method for the investigation of high-frequency characteristics of two-dimensional electron gas and GaN:C buffer layers in AlGaN/AlN/GaN heterostructures grown on a semi-insulating SiC substrate. The reflectance and transmittance spectra of the selected heterostructure layers were studied after the top layers were removed by a reactive ion etching. Results were numerically analyzed using the transfer matrix method taking into account the high-frequency electron conductivity via a Drude model and complex dielectric permittivity of each epitaxial layer via a one-phonon-resonance approximation. Good agreement between the experiment and theory was achieved revealing the temperature dependent electron effective mass in AlGaN/AlN/GaN high electron mobility transistor structures and the small damping factors of optical phonons due to high crystal quality of the epitaxial layers fabricated on the SiC substrate. |
| Databáze: | Directory of Open Access Journals |
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