Mobility overestimation due to gated contacts in organic field-effect transistors

Autor: Emily G. Bittle, James I. Basham, Thomas N. Jackson, Oana D. Jurchescu, David J. Gundlach
Jazyk: angličtina
Rok vydání: 2016
Předmět:
Zdroj: Nature Communications, Vol 7, Iss 1, Pp 1-7 (2016)
Druh dokumentu: article
ISSN: 2041-1723
DOI: 10.1038/ncomms10908
Popis: Charge mobility, extracted from current–voltage curves, is an important parameter for evaluating the performance of organic field-effect transistors. Bittle et al. show that charge mobility can be overestimated by one order of magnitude due to the gate bias dependence of the charge injection process.
Databáze: Directory of Open Access Journals