Electrodifusion of Manganese Atoms in Silicon
| Autor: | Xalmurat M. Iliyev, Zafar B. Khudoynazarov, Bobir O. Isakov, Mirahmat X. Madjitov, Abduvokhid A. Ganiyev |
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| Jazyk: | English<br />Russian<br />Ukrainian |
| Rok vydání: | 2024 |
| Předmět: | |
| Zdroj: | East European Journal of Physics, Iss 2, Pp 384-387 (2024) |
| Druh dokumentu: | article |
| ISSN: | 2312-4334 2312-4539 |
| DOI: | 10.26565/2312-4334-2024-2-48 |
| Popis: | The paper describes the research and study of the process of electrically induced diffusion of Mn atoms in silicon directly from a Si surface layer that was preliminarily enriched with Mn. To ensure the so-called electrically induced diffusion process, a constant electric field was applied to the investigated samples. It has been revealed that as a result of the diffusion of Mn impurity atoms into samples placed at the negative pole of the electrical diffusion unit, the proportion of Mn atoms was 75.4% (relative to silicon atoms), while in samples placed at the positive pole this indicator tended to be 2.7% (relative to silicon atoms). Besides that, for the first time, an experimental increase in the electro-active concentration of Mn impurity atoms in silicon (at T = 900°C) was detected under the influence of an external constant-value electric field. In this case, the maximum solubility of impurity atoms of Mn at a temperature of T = 900°C was NMn~2.27·1014 cm-3, while the average concentration of electro-active Mn atoms diffused into silicon under the influence of an external constant electric field reached NMn*~2.62·1014 cm-3. |
| Databáze: | Directory of Open Access Journals |
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