Molecular bridge-mediated ultralow-power gas sensing

Autor: Aishwaryadev Banerjee, Shakir-Ul Haque Khan, Samuel Broadbent, Ashrafuzzaman Bulbul, Kyeong Heon Kim, Seungbeom Noh, R. Looper, C. H. Mastrangelo, H. Kim
Jazyk: angličtina
Rok vydání: 2021
Předmět:
Zdroj: Microsystems & Nanoengineering, Vol 7, Iss 1, Pp 1-11 (2021)
Druh dokumentu: article
ISSN: 2055-7434
DOI: 10.1038/s41378-021-00252-3
Popis: Abstract We report the electrical detection of captured gases through measurement of the quantum tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas-sensing nanogap device consists of a pair of vertically stacked gold electrodes separated by an insulating 6 nm spacer (~1.5 nm of sputtered α-Si and ~4.5 nm ALD SiO2), which is notched ~10 nm into the stack between the gold electrodes. The exposed gold surface is functionalized with a self-assembled monolayer (SAM) of conjugated thiol linker molecules. When the device is exposed to a target gas (1,5-diaminopentane), the SAM layer electrostatically captures the target gas molecules, forming a molecular bridge across the nanogap. The gas capture lowers the barrier potential for electron tunneling across the notched edge region, from ~5 eV to ~0.9 eV and establishes additional conducting paths for charge transport between the gold electrodes, leading to a substantial decrease in junction resistance. We demonstrated an output resistance change of >108 times upon exposure to 80 ppm diamine target gas as well as ultralow standby power consumption of
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