Autor: |
Aishwaryadev Banerjee, Shakir-Ul Haque Khan, Samuel Broadbent, Ashrafuzzaman Bulbul, Kyeong Heon Kim, Seungbeom Noh, R. Looper, C. H. Mastrangelo, H. Kim |
Jazyk: |
angličtina |
Rok vydání: |
2021 |
Předmět: |
|
Zdroj: |
Microsystems & Nanoengineering, Vol 7, Iss 1, Pp 1-11 (2021) |
Druh dokumentu: |
article |
ISSN: |
2055-7434 |
DOI: |
10.1038/s41378-021-00252-3 |
Popis: |
Abstract We report the electrical detection of captured gases through measurement of the quantum tunneling characteristics of gas-mediated molecular junctions formed across nanogaps. The gas-sensing nanogap device consists of a pair of vertically stacked gold electrodes separated by an insulating 6 nm spacer (~1.5 nm of sputtered α-Si and ~4.5 nm ALD SiO2), which is notched ~10 nm into the stack between the gold electrodes. The exposed gold surface is functionalized with a self-assembled monolayer (SAM) of conjugated thiol linker molecules. When the device is exposed to a target gas (1,5-diaminopentane), the SAM layer electrostatically captures the target gas molecules, forming a molecular bridge across the nanogap. The gas capture lowers the barrier potential for electron tunneling across the notched edge region, from ~5 eV to ~0.9 eV and establishes additional conducting paths for charge transport between the gold electrodes, leading to a substantial decrease in junction resistance. We demonstrated an output resistance change of >108 times upon exposure to 80 ppm diamine target gas as well as ultralow standby power consumption of |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
|