| Autor: |
A. Ascoli, R. Tetzlaff, L. Chua |
| Jazyk: |
angličtina |
| Rok vydání: |
2015 |
| Předmět: |
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| Zdroj: |
Radioengineering, Vol 24, Iss 2, Pp 384-392 (2015) |
| Druh dokumentu: |
article |
| ISSN: |
1210-2512 |
| Popis: |
This work presents a continuous and differentiable approximation of a Tantalum oxide memristor model which is suited for robust numerical simulations in software. The original model was recently developed at Hewlett Packard labs on the basis of experiments carried out on a memristor manufactured in house. The Hewlett Packard model of the nano-scale device is accurate and may be taken as reference for a deep investigation of the capabilities of the memristor based on Tantalum oxide. However, the model contains discontinuous and piecewise differentiable functions respectively in state equation and Ohm's based law. Numerical integration of the differential algebraic equation set may be significantly facilitated under substitution of these functions with appropriate continuous and differentiable approximations. A detailed investigation of classes of possible continuous and differentiable kernels for the approximation of the discontinuous and piecewise differentiable functions in the original model led to the choice of near optimal candidates. The resulting continuous and differentiable DAE set captures accurately the dynamics of the original model, delivers well-behaved numerical solutions in software, and may be integrated into a commercially-available circuit simulator. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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