GHz voltage amplification in a stack of piezoelectric ScAlN and non-piezoelectric SiO2 layers

Autor: Sarina Kinoshita, Hiroki Kishi, Kota Izumi, Takahiko Yanagitani
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Applied Physics Express, Vol 17, Iss 11, p 116501 (2024)
Druh dokumentu: article
ISSN: 1882-0786
DOI: 10.35848/1882-0786/ad8da5
Popis: GHz voltage amplification was found in a stacked structure of piezoelectric layers (such as ScAlN) and non-piezoelectric layers (such as SiO _2 ). This allows for large-area fabrication using commercial equipment. This approach contributes to wireless sensor activation. The electromechanical coupling coefficients k _t ^2 of the input and output layers were found to be 17.6% and 13.7%, respectively. An experimental open-circuit voltage gain of 4.5 (+13 dB) at 0.8 GHz was observed, with a maximum transmission loss (S _21 ) of −5 dB. The experimental result shows good agreement with the theoretical prediction simulated by the electromechanical transmission line model.
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