| Autor: |
Fernando Avelar-Muñoz, Roberto Gómez-Rosales, Arturo Agustín Ortiz-Hernández, Héctor Durán-Muñoz, Javier Alejandro Berumen-Torres, Jorge Alberto Vagas-Téllez, Hugo Tototzintle-Huitle, Víctor Hugo Méndez-García, José de Jesús Araiza, José Juan Ortega-Sigala |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
|
| Zdroj: |
Micromachines, Vol 15, Iss 6, p 800 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2072-666X |
| DOI: |
10.3390/mi15060800 |
| Popis: |
p-type Ag-N dual acceptor doped ZnO thin films with long electrical stability were deposited by DC magnetron reactive co-sputtering technique. After deposition, the films were annealed at 400 °C for one hour in a nitrogen-controlled atmosphere. The deposited films were amorphous. However, after annealing, they crystallize in the typical hexagonal wurtzite structure of ZnO. The Ag-N dual acceptors were incorporated substitutionally in the structure of zinc oxide, and achieving that; the three samples presented the p-type conductivity in the ZnO. Initial electrical properties showed a low resistivity of from 1 to 10−3 Ω·cm, Hall mobility of tens cm2/V·s, and a hole concentration from 1017 to 1019 cm−3. The electrical stability analysis reveals that the p-type conductivity of the ZnO:Ag,N films is very stable and does not revert to n-type, even after 36 months of aging. These results reveal the feasibility of using these films for applications in short-wavelength or transparent optoelectronic devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
