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Multi-junction solar cells are vital in developing reliable, green, sustainable solar cells. Consequently, the computational optimization of solar cell architecture has the potential to profoundly expedite the process of discovering high-efficiency solar cells. Copper indium gallium selenide (CIGS)-based solar cells exhibit substantial performance compared to those utilizing cadmium sulfide (CdS). Likewise, CIGS-based devices are more efficient according to their device performance, environmentally benign nature, and thus, reduced cost. Therefore, the paper introduces an optimization process of three-layered n-CdS/p-CIGS/p-GaAs (NPP)) solar cell architecture based on thickness and carrier charge density. An in-depth investigation of the numerical analysis for homojunction PPN-junction with the ’GaAs’ layer structure along with n-ZnO front contact was simulated using the Solar Cells Capacitance Simulator (SCAPS-1D) software. Subsequently, various computational optimization techniques for evaluating the effect of the thickness and the carrier density on the performance of the PPN layer on solar cell architecture were examined. The electronic characteristics by adding the GaAs layer on the top of the conventional (PN) junction further led to optimized values of the power conversion efficiency (PCE), open-circuit voltage (VOC), fill factor (FF), and short-circuit current density (JSC) of the solar cell. Lastly, the paper concludes by highlighting the most promising results of our study, showcasing the impact of adding the GaAs layer. Hence, using the optimized values from the analysis, thickness of 5 (μm) and carrier density of 1×1020 (1/cm) resulted in the maximum PCE, VOC, FF, and JSC of 45.7%, 1.16 V, 89.52%, and 43.88 (mA/m2), respectively, for the proposed solar cell architecture. The outcomes of the study aim to pave the path for highly efficient, optimized, and robust multi-junction solar cells. |
