Autor: |
In-Ho Bae, Seongchong Park, Kee-Suk Hong, Dong-Hoon Lee |
Jazyk: |
angličtina |
Rok vydání: |
2023 |
Předmět: |
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Zdroj: |
IEEE Photonics Journal, Vol 15, Iss 1, Pp 1-6 (2023) |
Druh dokumentu: |
article |
ISSN: |
1943-0655 |
DOI: |
10.1109/JPHOT.2023.3237199 |
Popis: |
We report on the characteristics of a lab-assembled UV single photon detector based on a thermoelectrically cooled silicon carbide (4H-SiC) avalanche photodiode (APD). The SiC- APD in this experiment was fabricated with a beveled mesa structure, with electronics designed to achieve passive Geiger-mode operation and to convert the avalanche signal to a transistor–transistor logic signal by readout backend. We attached the SiC-APD to a 4-stage thermoelectric cooler to vary APD temperature from 25 °C to −30 °C, and investigated dark count rates according to applied bias voltage at different temperatures. Breakdown voltages applied to the SiC-APD were also measured while adjusting APD temperature. Finally, we evaluated afterpulse characteristics through the time-correlated single-photon counting method, and observed that afterpulsing probability increases with decreasing APD temperature. |
Databáze: |
Directory of Open Access Journals |
Externí odkaz: |
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