| Autor: |
Lucas Nyssens, Shiqi Ma, Martin Rack, Dimitri Lederer, Jean-pierre Raskin |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 11, Pp 650-657 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2023.3284291 |
| Popis: |
Advances in CMOS technology have enabled MOSFET with cutoff and maximum oscillation frequencies (ft and fmax) in the 400 GHz range, thus opening the path to CMOS-based applications at millimeter-wave (mm-wave) and sub-THz frequencies. Accurate compact models and therefore on-wafer MOSFET measurements at mm-wave frequencies and beyond become crucial for IC design at such high frequencies. However, accurate on-wafer measurement at these frequencies is a complex task requiring dedicating special care to calibration kit (calkit) design and characterization. This paper presents a complete and detailed parasitic correction procedure approach that demonstrates accurate corrected MOSFET measurements up to 110 GHz. It describes the custom calkit designed to perform ‘in-situ’ multiline Thru-Reflect-Line (mTRL) calibration. In this work, we compare different methods to evaluate the transmission line standards characteristic impedance and identify the best one by comparing the extracted series resistances of a MOSFET. The best method features frequency variations as low as |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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