High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

Autor: Yizhou Qian, En-Lin Hsiang, Yu-Hsin Huang, Kuan-Heng Lin, Shin-Tson Wu
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Crystals, Vol 14, Iss 6, p 503 (2024)
Druh dokumentu: article
ISSN: 2073-4352
DOI: 10.3390/cryst14060503
Popis: Micro-LEDs have found widespread applications in modular large-screen TVs, automotive displays, and high-resolution-density augmented reality glasses. However, these micron-sized LEDs experience a significant efficiency reduction due to the defects originating from the dry etching process. By controlling the current distribution via engineering the electrode size, electrons will be less concentrated in the defect region. In this work, we propose a blue InGaN/GaN compound parabolic concentrator micro-LED with a metallic sidewall to boost efficiency by combining both an optical dipole cloud model and electrical TCAD (Technology Computer-Aided Design) model. By merely modifying the p-GaN contact size, the external quantum efficiency (EQE) can be improved by 15.6%. By further optimizing the passivation layer thickness, the EQE can be boosted by 52.1%, which helps enhance the display brightness or lower power consumption.
Databáze: Directory of Open Access Journals