Modeling of the effect of radicals on plasmas used for etching in microelectronics
| Autor: | Nikitović Željka D., Jovanović Jasmina V., Cvelbar Uroš, Mozetič Miran, Stojanović Vladimir D. |
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| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: | |
| Zdroj: | FME Transactions, Vol 44, Iss 1, Pp 105-108 (2016) |
| Druh dokumentu: | article |
| ISSN: | 1451-2092 2406-128X 16048709 |
| Popis: | Plasma etching represents one of the critical steps in manufacturing of integrated circuits. Further optimization of plasma equipment is needed since new generations in technology require different plasma chemistry. In this paper, we will study the influence of radicals on the plasma characteristics, since it was often neglected in plasma models. The radicals dominate attachment of electrons as the basic etching mixture is weakly electronegative and they also affect the drift velocity through modified momentum balance. We have used numerical solutions to the Boltzmann equation and Monte Carlo simulations (MCS) to determine the transport coefficients of electrons. |
| Databáze: | Directory of Open Access Journals |
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