| Autor: |
Atabek E. Atamuratov, Khushnudbek Sh. Saparov, Ahmed Yusupov, Jean Chamberlain Chedjou |
| Jazyk: |
angličtina |
| Rok vydání: |
2023 |
| Předmět: |
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| Zdroj: |
Applied Sciences, Vol 13, Iss 10, p 6131 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2076-3417 |
| DOI: |
10.3390/app13106131 |
| Popis: |
In this paper, degradation effects, such as self-heating effect (SHE) and drain-induced barrier lowering (DIBL) effect in 2D MoS2-based MOSFETs are investigated through simulations. The SHE is simulated based on the thermodynamic transport model. The dependence of the DIBL effect and the lattice temperature in the middle of the channel on the gate length is considered for transistors with different gate oxide and back oxide (BOX) materials. The effects of Al2O3 and HfO2 as gate oxide and SiO2 and HfO2 as BOX materials are compared. Transistors, in which the channel is fully and partially (i.e., just below the gate) covered by a gate oxide, are considered. It is shown that the transistors with Al2O3 as gate oxide and SiO2 as BOX materials have higher immunity to DIBL effect and transistors with HfO2 as gate oxide and HfO2 as BOX materials have higher immunity to SHE. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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