Radiation Hardness of Mos Structures Exposed to High-Energy Ions

Autor:	Ladislav Harmatha, L. Stuchlikova, P. Pisecny
Jazyk:	angličtina
Rok vydání:	2006
Předmět:	silicon high-energy ion implantation irradiation mos structure capacitance method dlts Transportation and communications HE1-9990 Science Transportation engineering TA1001-1280
Zdroj:	Communications, Vol 8, Iss 1, Pp 25-28 (2006)
Druh dokumentu:	article
ISSN:	1335-4205 2585-7878
DOI:	10.26552/com.C.2006.1.25-28
Popis:	MOS structures exposed to 305 MeV Kr and 710 MeV Bi ions irradiation with fluences of 109 cm2 and 1010 cm2 were investigated by capacitance measuring methods (C-V, C-t), completed by quasistatic low-frequency C-V and DLTS measurements.The irradiated MOS structures were functional in spite of a high density of radiation defects. The electric activity of the defects brought a sharp decrease in the generation parameters tr and g. The parameters of six deep levels were detected in the MOS structures exposed to 710 MeV Bi ions irradiation. Five of these levels with energies 0.52 eV, 0.14 eV, 0.17 eV, 0.25 eV, 0.27 eV were radiation defects.
Databáze:	Directory of Open Access Journals
Externí odkaz:	https://doaj.org/article/5ff8c730a0e54fd2acdeb159b345e85c Zobrazit plný text záznamu View record in DOAJ