| Autor: |
Erkaboev U. I., Sayidov N. A., Negmatov U. M., Rakhimov R. G., Mirzaev J. I. |
| Jazyk: |
English<br />French |
| Rok vydání: |
2023 |
| Předmět: |
|
| Zdroj: |
E3S Web of Conferences, Vol 401, p 04042 (2023) |
| Druh dokumentu: |
article |
| ISSN: |
2267-1242 |
| DOI: |
10.1051/e3sconf/202340104042 |
| Popis: |
This article investigated the temperature dependence of the width band gap in InxGa1-xAs quantum well in the presence of a transverse strong magnetic field. A new method was proposed for determining the width band gap of GaAs/InxGa1-xAs heterostructures based on a InxGa1-xAs quantum well in the presence of a magnetic field and temperature. An analytical expression is obtained for calculating the width band gap of a rectangular quantum well at various magnetic fields and temperatures. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
|
