| Autor: |
Soohyun Kim, Jungchun Kim, Doyoung Jang, Romain Ritzenthaler, Bertrand Parvais, Jerome Mitard, Hans Mertens, Thomas Chiarella, Naoto Horiguchi, Jae Woo Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Applied Sciences, Vol 10, Iss 8, p 2979 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2076-3417 |
| DOI: |
10.3390/app10082979 |
| Popis: |
The temperature dependent carrier transport characteristics of n-type gate-all-around nanowire field effect transistors (GAA NW-FET) on bulk silicon are experimentally compared to bulk fin field effect transistors (FinFET) over a wide range of temperatures (25–125 °C). A similar temperature dependence of threshold voltage (VTH) and subthreshold swing (SS) is observed for both devices. However, effective mobility (μeff) shows significant differences of temperature dependence between GAA NW-FET and FinFET at a high gate effective field. At weak Ninv (= 5 × 1012 cm2/V∙s), both GAA NW-FET and FinFET are mainly limited by phonon scattering in μeff. On the other hand, at strong Ninv (= 1.5 × 1013 cm2/V∙s), GAA NW-FET shows 10 times higher dμeff/dT and 1.6 times smaller mobility degradation coefficient (α) than FinFET. GAA NW-FET is less limited by surface roughness scattering, but FinFET is relatively more limited by surface roughness scattering in carrier transport. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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