Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy
| Autor: | Krause B, Metzger TH, Wang L, Rastelli A, Kiravittaya S, Songmuang R, Schmidt OG |
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| Jazyk: | angličtina |
| Rok vydání: | 2006 |
| Předmět: | |
| Zdroj: | Nanoscale Research Letters, Vol 1, Iss 1, Pp 74-78 (2006) |
| Druh dokumentu: | article |
| ISSN: | 1931-7573 1556-276X |
| DOI: | 10.1007/s11671-006-9003-y |
| Popis: | Abstract We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2. |
| Databáze: | Directory of Open Access Journals |
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