| Autor: |
Gokhan Kurt, Melisa Ekin Gulseren, Gurur Salkim, Sertac Ural, Omer Ahmet Kayal, Mustafa Ozturk, Bayram Butun, Mehmet Kabak, Ekmel Ozbay |
| Jazyk: |
angličtina |
| Rok vydání: |
2019 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 7, Pp 351-357 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2019.2899387 |
| Popis: |
A hybrid approach for obtaining normally off high electron mobility transistors (HEMTs) combining fluorine treatment, recess etch techniques, and AlGaN buffer was studied. The effects of process variations (recess etch depth and fluorine treatment duration) and epitaxial differences (AlGaN and carbon doped GaN buffers) on the DC characteristics of the normally off HEMTs were investigated. Two different epitaxial structures and three different process variations were compared. Epitaxial structures prepared with an AlGaN buffer showed a higher threshold voltage (Vth = +3.59 V) than those prepared with a GaN buffer (Vth = +1.85 V). |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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