| Autor: |
Takaho Yokoyama, Naoyuki Hirata, Hironori Tsunoyama, Yuichi Negishi, Atsushi Nakajima |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 8, Iss 6, Pp 065002-065002-9 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5025509 |
| Popis: |
The floating-gate memory characteristics of thiolate-protected gold (Au:SR) and palladium doped Au (AuPd:SR) nanoclusters, Au25(SR)18, Au24Pd(SR)18, and Au38(SR)24 (R = C12H25), were investigated by capacitance-voltage (C–V) measurements in vacuum. Monolayer films of Au:SR nanoclusters were formed as floating-gate memory layers on p-type Si substrates by the Langmuir-Schaefer method with surface pressure − area (π-A) isotherm measurements. A fluoropolymer (CYTOP, ∼15 nm thick) was spin-coated on top to form a hydrophobic insulating layer. Using an Au pad (∼40 nm thick) as the gate electrode, C–V measurements exhibit clockwise hysteresis curves originating from the Au:SR and AuPd:SR nanoclusters against the reference measured in each sample, and the hysteresis widths were dependent on the composition and sizes of the Au:SR nanoclusters. The positive and negative voltage shifts in the hysteresis can be explained in terms of electronic structures in Au:SR and AuPd:SR-based devices. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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