| Autor: |
Hyeon Jun Hwang, Yongsu Lee, Chunhum Cho, Byoung Hun Lee |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
AIP Advances, Vol 8, Iss 10, Pp 105326-105326-6 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/1.5051671 |
| Popis: |
Persistent PMMA residue formed during a graphene transfer has been a culprit in the optimization of graphene device performance. We demonstrated a facile process to remove the PMMA residue using pulsed KrF laser annealing system at H2/Ar ambient. 10min laser annealing at 248nm could remove the PMMA residue as well as the methoxy and carboxyl function groups without causing noticeable damage to the graphene. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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