Lower-voltage electroluminescent device with metastable nanostructure for silicon photonics

Autor: Mohammad M. Afandi, Gyeongdo Baek, Jongsu Kim
Jazyk: angličtina
Rok vydání: 2024
Předmět:
Zdroj: Next Materials, Vol 4, Iss , Pp 100203- (2024)
Druh dokumentu: article
ISSN: 2949-8228
DOI: 10.1016/j.nxmate.2024.100203
Popis: The Zn2SiO4 oxide material, known for its excellent efficiency and stability, has been widely explored as a highly practical optically functional material. However, much of the existing research has predominantly concentrated on the α-phase Zn2SiO4, neglecting the β-phase counterpart due to concerns related to its metastability and uncertainties surrounding its crystal properties. Herein, we conducted a feasibility study to introduce the electroluminescent (EL) device using a metastable form of β-phase Zn2SiO4:Mn2+ nanostructure for silicon photonics. The film was fabricated using the radio frequency magnetron sputtering method and synthesized via a rapid thermal annealing process. The Mn2+-doped β-Zn2SiO4 phase was successfully obtained at a lower annealing temperature, as evidenced by the crystallographic and optical characteristics of the developed films. Under a low-voltage sinusoidal driven voltage, the EL device emitted yellow light with an emission center at 564 nm, attributed to the d-d transitions of Mn2+ ions within the β-Zn2SiO4 host lattice. Furthermore, the EL device exhibits outstanding waveform stability under applied voltages, indicating promising application in various fields, particularly in light communications. This study highlights the versatility of the Zn2SiO4 optical functional material, showcasing its utility as a light source not only in its α-phase but also in the metastable form of β-phase. This case study encourages further exploration of the β-Zn2SiO4 metastable material in future research.
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