Faraday-cage-assisted etching of suspended gallium nitride nanostructures

Autor: Geraint P. Gough, Angela D. Sobiesierski, Saleem Shabbir, Stuart Thomas, Daryl M. Beggs, Robert A. Taylor, Anthony J. Bennett
Jazyk: angličtina
Rok vydání: 2020
Předmět:
Zdroj: AIP Advances, Vol 10, Iss 5, Pp 055319-055319-4 (2020)
Druh dokumentu: article
ISSN: 2158-3226
DOI: 10.1063/5.0007947
Popis: We have developed an inductively coupled plasma etching technique using a Faraday cage to create suspended gallium-nitride devices in a single step. The angle of the Faraday cage, gas mix, and chamber condition define the angle of the etch and the cross-sectional profile, which can feature undercut angles of up to 45°. We fabricate singly- and doubly-clamped cantilevers of a triangular cross section and show that they can support single optical modes in the telecom C-band.
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