| Autor: |
Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo |
| Jazyk: |
angličtina |
| Rok vydání: |
2024 |
| Předmět: |
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| Zdroj: |
IEEE Access, Vol 12, Pp 35410-35416 (2024) |
| Druh dokumentu: |
article |
| ISSN: |
2169-3536 |
| DOI: |
10.1109/ACCESS.2024.3368870 |
| Popis: |
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\text{G}_{\mathrm {p}}/\omega)$ analyses and TCAD simulations, it has been demonstrated that the negative shifts in both $\text{I}_{\mathrm {d}}$ - $\text{V}_{\mathrm {gs}}$ and $\text{V}_{\mathrm {th}}$ are primarily due to the formation of donor-like traps near the p-GaN/AlGaN interface, which is a result of the dehydrogenation of pre-existing defects during low dose rate irradiation. Additionally, the results of the TCAD simulations, indicate that the trap-assisted tunneling (TAT) process, which involves the recombination of trap-assisted holes with electrons in the p-GaN layer, may dominate the physical mechanisms responsible for the increase in gate leakage current ( $\text{I}_{\mathrm {g}}$ - $\text{V}_{\mathrm {gs}}$ ). These results may provide a basis for understanding the role of radiation-induced traps on electrical parameters degradations for p-GaN gate HEMTs. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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