| Autor: |
Po-Chun Chang, Chih-Jen Hsiao, Franky Juanda Lumbantoruan, Chia-Hsun Wu, Yen-Ku Lin, Yueh-Chin Lin, Simon M. Sze, Edward Yi Chang |
| Jazyk: |
angličtina |
| Rok vydání: |
2018 |
| Předmět: |
|
| Zdroj: |
IEEE Journal of the Electron Devices Society, Vol 6, Pp 856-860 (2018) |
| Druh dokumentu: |
article |
| ISSN: |
2168-6734 |
| DOI: |
10.1109/JEDS.2018.2859811 |
| Popis: |
In this paper, the InGaAs junctionless (JL) FinFET with notable electrical performance is demonstrated. The device with $W_{\mathrm{ fin}}$ down to 20 nm, EOT of 2.1 nm, and $L_{G} = 60$ nm shows high $I_{\mathrm{ ON}} = 188~\mu \text{A}/\mu \text{m}$ at $V_{DD} = 0.5$ V and $I_{\mathrm{ OFF}} = 100$ nA/ $\mu \text{m}$ , $I_{\mathrm{ ON}}/I_{\mathrm{ OFF}} = 5 \times 10^{5}$ , DIBL = 106 mV/V and SS = 96 mV/dec. The device also exhibits a decent extrinsic transconductance ( $G_{\mathrm{ m}}$ ) of 1142 $\mu \text{S}/\mu \text{m}$ at $V_{\mathrm{ DS}}$ of 0.5 V. This high performance is attributed to the moderate doping concentration to ensure the channel carriers could be effectively depleted and the low $R_{\mathrm{ SD}}$ realized by self-aligned Ni-InGaAs alloy S/D. Furthermore, we also examine the temperature dependence of the main electrical parameters of the JL transistor. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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