| Autor: |
Changbong Yeon, Jaesun Jung, Hyeran Byun, Kok Chew Tan, Taeho Song, Sojung kim, Jin Hee Kim, Seok Jong Lee, Young-Soo Park |
| Jazyk: |
angličtina |
| Rok vydání: |
2021 |
| Předmět: |
|
| Zdroj: |
AIP Advances, Vol 11, Iss 1, Pp 015218-015218-9 (2021) |
| Druh dokumentu: |
article |
| ISSN: |
2158-3226 |
| DOI: |
10.1063/5.0031127 |
| Popis: |
A novel atomic layer deposition (ALD) that utilizes tertiary alkyl (tert-alkyl) halides as both growth activator and inhibitor is introduced and demonstrated for the deposition of a low resistive TiN film using TiCl4 and NH3. Among the alkyl halides, tert-butyl iodide is identified as a suitable material for both growth inhibition and growth activation without any incorporation of C impurity in the film. The electrical resistivity values of TiN thin films in activator-type and inhibitor-type ALD were significantly improved by 55% and 49%, respectively. The mechanism of the reduction in electrical resistivity is elucidated by means of theoretical approach and characterizations of TiN films. For activator-type ALD, tert-butyl iodide induces in situ ligand exchange with an adsorbed Ti precursor to form Ti–I bonds, leading to an increase in the reactivity with a NH3 reactant. For inhibitor-type ALD, the improvement of film conformality in a high aspect ratio (>22:1) substrate is exhibited. This study demonstrates that the effectiveness on the use of tert-alkyl halides in ALD deposition can serve as an important guideline for future studies of the growth activator and growth inhibitor to improve film properties, making the method widely applicable. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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