| Autor: |
T. T. Trung, A. M. Borovik, V. R. Stempitsky |
| Jazyk: |
ruština |
| Rok vydání: |
2019 |
| Předmět: |
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| Zdroj: |
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 0, Iss 8, Pp 11-17 (2019) |
| Druh dokumentu: |
article |
| ISSN: |
1729-7648 |
| Popis: |
A new approach of nanoscale MOSFETs electrical characteristics calculating, the essence of which is the use of correction factors, as well as such values of classic drift-diffusion models, which would effectively take into account the quantum-mechanical transport mechanisms is proposed. Modified direct search method of drift-diffusion model optimization for MOSFET with a 90 nm channel length is developed and used. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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