| Autor: |
Chao Ma, Zhen Luo, Weichuan Huang, Letian Zhao, Qiaoling Chen, Yue Lin, Xiang Liu, Zhiwei Chen, Chuanchuan Liu, Haoyang Sun, Xi Jin, Yuewei Yin, Xiaoguang Li |
| Jazyk: |
angličtina |
| Rok vydání: |
2020 |
| Předmět: |
|
| Zdroj: |
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020) |
| Druh dokumentu: |
article |
| ISSN: |
2041-1723 |
| DOI: |
10.1038/s41467-020-15249-1 |
| Popis: |
Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectric tunnel junctions. |
| Databáze: |
Directory of Open Access Journals |
| Externí odkaz: |
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